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Capacitance-voltage studies on enhancement-mode InGaAs metal-oxide-semiconductor field-effect transistor using atomic-layer-deposited gate dielectric
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10.1063/1.2217258
/content/aip/journal/apl/88/26/10.1063/1.2217258
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/26/10.1063/1.2217258
/content/aip/journal/apl/88/26/10.1063/1.2217258
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/content/aip/journal/apl/88/26/10.1063/1.2217258
2006-06-30
2014-08-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Capacitance-voltage studies on enhancement-mode InGaAs metal-oxide-semiconductor field-effect transistor using atomic-layer-deposited Al2O3 gate dielectric
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/26/10.1063/1.2217258
10.1063/1.2217258
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