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Improved ultraviolet emission from reduced defect gallium nitride homojunctions grown on step-free mesas
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10.1063/1.2218045
/content/aip/journal/apl/88/26/10.1063/1.2218045
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/26/10.1063/1.2218045
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) EL spectra from step-free (blue, ), stepped (red, ), and “defective” (black, ) mesas. (b) A logarithmic-intensity plot of the EL spectra from a step-free mesa at a variety of current densities (as labeled). The onset and shift of the blue EL band are evident with increasing current.

Image of FIG. 2.
FIG. 2.

(Color online) (a) Dependence of UV EL intensity (closed symbols, left axis) and the ratio of the UV to yellow EL Intensity (open symbols, right axis) as a function of current density for a step-free (blue squares) and a stepped (red circles) mesa. (b) Histogram of the percent improvement of the UV EL output of a variety of step-free mesas in comparison to their stepped counterparts within various dies scattered across the wafer surface.

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/content/aip/journal/apl/88/26/10.1063/1.2218045
2006-06-27
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Improved ultraviolet emission from reduced defect gallium nitride homojunctions grown on step-free 4H-SiC mesas
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/26/10.1063/1.2218045
10.1063/1.2218045
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