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Alternative precursor metal-organic chemical vapor deposition of quantum dot laser diodes with ultralow threshold at
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10.1063/1.2218059
/content/aip/journal/apl/88/26/10.1063/1.2218059
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/26/10.1063/1.2218059
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Room-temperature PL spectra at low and high excitation density: Comparison of single (a) and fivefold stacked -QD layers (b) overgrown by a QW with 8% and 15% In content and (c) stacking series with 15% In in the QW.

Image of FIG. 2.
FIG. 2.

Comparison of threefold QD stacks grown with and without constant growth interruption time throughout the stack.

Image of FIG. 3.
FIG. 3.

Performance of broad area laser diodes with fivefold QD stack under pulsed operation.

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/content/aip/journal/apl/88/26/10.1063/1.2218059
2006-06-28
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Alternative precursor metal-organic chemical vapor deposition of InGaAs∕GaAs quantum dot laser diodes with ultralow threshold at 1.25μm
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/26/10.1063/1.2218059
10.1063/1.2218059
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