banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Application of the interface capacitance model to thin-film relaxors and ferroelectrics
Rent this article for
View: Figures


Image of FIG. 1.
FIG. 1.

(a) The distribution of polarization across the thickness of the FE film (dashed curves) in the capacitor heterostructure with metal electrodes (curves 1 and 2) and with perovskite electrodes (curve 3). The ICM approximation of is shown by solid lines. (b) The permittivity of the heterostructures with both different thicknesses of the FE films and different permittivity of the body of the FE films: from the lower curve up. (c) The factor by which the measured permittivity can be smaller than that of the film for the thickness and the interface parameters .

Image of FIG. 2.
FIG. 2.

The real part of the dielectric permittivity and the inverse permittivity measured at in the thin-film heterostructures of FE PLZT (a), BST (b), and RFE PMN and PSN [(c) and (d)] as a function of [(a)–(c)] temperature and (d) square . The straight lines are fits to the Curie-Weiss law [(a) and (b)] and to the empirical scaling law (d).

Image of FIG. 3.
FIG. 3.

The real and imaginary parts of the dielectric permittivity, and , and the loss factor as a function of frequency in the thin-film heterostructure with the high resistivity electrodes. The properties of the film are shown for comparison (dashed lines).


Article metrics loading...


Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Application of the interface capacitance model to thin-film relaxors and ferroelectrics