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Growth and characteristics of low dislocation density GaN grown on Si(111) from a single process
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10.1063/1.2158487
/content/aip/journal/apl/88/3/10.1063/1.2158487
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/3/10.1063/1.2158487
/content/aip/journal/apl/88/3/10.1063/1.2158487
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/content/aip/journal/apl/88/3/10.1063/1.2158487
2006-01-20
2014-07-30
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Growth and characteristics of low dislocation density GaN grown on Si(111) from a single process
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/3/10.1063/1.2158487
10.1063/1.2158487
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