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Growth and characteristics of low dislocation density GaN grown on Si(111) from a single process
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10.1063/1.2158487
/content/aip/journal/apl/88/3/10.1063/1.2158487
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/3/10.1063/1.2158487
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Figures

Image of FIG. 1.
FIG. 1.

SEM images of GaN with a 9 min growth on maskless-patterned Si(111) under the temperatures (a) 1000 °C, (b) 1015 °C, and (c) 1030 °C, respectively.

Image of FIG. 2.
FIG. 2.

Cross-sectional view SEM (a) and TEM (b) images of a GaN layer grown on structured Si substrate. The white lines in (b) outline the possible positions of the FC grown GaN crystal at 1015 °C.

Image of FIG. 3.
FIG. 3.

AFM surface scan of the GaN layer grown on the maskless patterned Si(111) substrate.

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/content/aip/journal/apl/88/3/10.1063/1.2158487
2006-01-20
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Growth and characteristics of low dislocation density GaN grown on Si(111) from a single process
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/3/10.1063/1.2158487
10.1063/1.2158487
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