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Root-like structure at the nanowire/substrate interface in GaAs nanowires
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) Secondary electron SEM image of ion-milled trench with the cross-section TEM specimen of the GaAs NWs on substrate. The sample was prepared in a dual-beam FIB and the viewing direction is normal to the sample surface. (b) A higher magnification bright-field TEM image of the cross-section sample showing a high density of growth defects in the NWs and a distinct defect layer at the interface between the NWs and the substrate. (c) A bright-field TEM image of individual GaAs NWs with a distinct root-like structure near the NW/substrate interface. (d) a high-resolution TEM image of the root-like structure showing two roots and the Moiré fringe pattern resulting from the overlap of the root structure with the substrate structure.

Image of FIG. 2.
FIG. 2.

(a) Atomic resolution TEM image of a single root within the GaAs substrate. Periodic faulting on {111} planes is seen. (b) Fourier transform diffraction pattern of only the GaAs substrate (left side of image in (a). (c) Fourier transform diffraction pattern of both root and the substrate regions shown on the right side of (a). (d) A key figure illustrating the overlap of the [011] zone axis of the zinc-blende cubic structure from the GaAs substrate with the [10-1] zone axis of the CdTe type orthorhombic structure of the roots. This key figure represents the diffraction pattern shown in (c).


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Root-like structure at the nanowire/substrate interface in GaAs nanowires