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Dependence of the ratio of the Al x-ray intensity measured from the samples to that of a pure Al standard on the electron beam energy for samples 475 (circle), 474 (triangle), and 326 (square), and the corresponding Monte Carlo fits for thicknesses of (dashed line), (dotted line), and (solid line).
SEM images of the surface of samples (a) 326, (b) 474, (c) 475, (d) 326ia, Eu implanted, and annealed at , (e) 474ia, Eu implanted, and annealed at and (f) 326ia at the border of implanted (upper half) and unimplanted (lower half) regions.
(a) BSE image of sample 474ia, implanted with Eu and annealed at , and corresponding compositional mappings obtained with WDX of (b) N and (c) Ga signals. (d) Spectrum obtained in this area showing the typical sharp emissions related to intra electronic transitions. (e) CL mapping of the integrated intensity from the transition corresponding to the same area (dark, 1500 counts, bright, 5500 counts). The ellipse shows a N-poor area which is associated with a decreased emission efficiency.
SEM images from (a) sample 474ia and (b) a sample treated in the same conditions but with an AlN proximity cap during the annealing. A strong improvement of the surface has been obtained in the latter, which does not show almost any holes formation.
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