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Band alignment between (100) Si and amorphous , , and : Atomically abrupt versus interlayer-containing interfaces
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10.1063/1.2164432
/content/aip/journal/apl/88/3/10.1063/1.2164432
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/3/10.1063/1.2164432
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) IPE/PC yield as a function of photon energy measured in MOS capacitors with -thick layers of amorphous deposited by PLD on (100) Si covered with a -thick chemical oxide (circles) or by MBD directly on the (100) Si surface (squares). The open/closed symbols correspond to data taken with positive/negative bias on the Au electrode, respectively, with an average electric field strength in the oxide of . The insert in panel (a) diagramatically shows the observed electron transitions and the corresponding energy thresholds. Panel (b) and the inset illustrate the determination of the spectral thresholds.

Image of FIG. 2.
FIG. 2.

(a) IPE/PC yield as a function of photon energy measured in MOS capacitors with -thick layers of amorphous deposited by PLD on (100) Si covered with a -thick chemical oxide (circles) or by MBD directly on the (100) Si surface (squares). The open/closed symbols correspond to the data taken with positive/negative bias on the Au electrode with an average electric field strength in the oxide of . Panel (b) and the inset illustrate the determination of the spectral thresholds.

Image of FIG. 3.
FIG. 3.

(a) IPE/PC yield as a function of photon energy measured in MOS capacitors with a 40-nm-thick layer of amorphous grown by MBD directly on (100) Si. The open/closed symbols correspond to data taken with the indicated positive/negative bias on the Au electrode. Panel (b) and the inset illustrate the determination of the spectral thresholds.

Image of FIG. 4.
FIG. 4.

(a) IPE/PC yield as a function of photon energy measured for different values of positive gate bias in MOS capacitors with a 40-nm-thick layer of amorphous grown by MBD and subsequently oxidized for 10 min in at 650 °C and 1 atm. Panel (b) and the inset illustrate the determination of the spectral thresholds from the yield power plots.

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/content/aip/journal/apl/88/3/10.1063/1.2164432
2006-01-18
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Band alignment between (100) Si and amorphous LaAlO3, LaScO3, and Sc2O3: Atomically abrupt versus interlayer-containing interfaces
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/3/10.1063/1.2164432
10.1063/1.2164432
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