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Effect of thickness on the crystallization of ultrathin HfSiON gate dielectrics
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10.1063/1.2165182
/content/aip/journal/apl/88/3/10.1063/1.2165182
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/3/10.1063/1.2165182
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Figures

Image of FIG. 1.
FIG. 1.

GI-XRD spectra for HfSiO thickness series. The 1.5 and 2.0 nm HfSiO films do not show crystalline peaks. The 2.5 and 4.0 nm HfSiO films show short-range crystallization. The inset shows that 700 °C annealing does not enhance crystallization in the films.

Image of FIG. 2.
FIG. 2.

GI-XRD spectrum for HfSiO(N) films after 1000 °C 10 s anneal. The 1.5 and 2.0 nm HfSiO(N) films remain amorphous, whereas some peaks for monoclinic and tetragonal develop for the 2.5 and 4.0 nm HfSiO(N) films. For reference, the XRD results for a 1 nm HfSiO film after 1100 °C 120 s RTA in is also shown. This demonstrates the XRD sensitivity for crystallinity detection in ultrathin films.

Image of FIG. 3.
FIG. 3.

Plan-view HR-TEM images for HfSiO(N) films after 1000 °C 10 s anneal (a) 1.5 nm HfSiO(N) film does not show the presence of crystalline regions and (b) 4.0 nm HfSiO(N) film shows phase separation and crystallization.

Image of FIG. 4.
FIG. 4.

for HfSiO(N) of different thickness as a function of time at room temperature. was much higher for 2.5 and 4.0 nm HfSiO(N) films relative to the 1.5 and 2.0 nm films.

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/content/aip/journal/apl/88/3/10.1063/1.2165182
2006-01-17
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of thickness on the crystallization of ultrathin HfSiON gate dielectrics
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/3/10.1063/1.2165182
10.1063/1.2165182
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