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SiC pore surfaces: Surface studies of and
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View: Figures


Image of FIG. 1.
FIG. 1.

(Color online) Atomic model of 4H–SiC in side-view perspective along the direction with bonds within the plane indicated by black line (a), and orientation of the plane as grey line (a) and by lattice vector construction (b). Large atoms represent Si, small atoms C.

Image of FIG. 2.
FIG. 2.

(Color online) Bulk truncated surface, (a) Si terminated with surface unit cell indicated, and (b) C terminated with 4H-bulk unit cell indicated. (c) surface shown in top view. The unit cell ( size), as well as the separation in cubic (100) type (bounded by dotted lines) and (0001) basal plane type (bounded by dashed lines) patches and crystal directions, are indicated.

Image of FIG. 3.
FIG. 3.

(Color online) AFM images obtained after hydrogen etching of (a) and (b) . Line profiles parallel and perpendicular to the direction are shown on the right.

Image of FIG. 4.
FIG. 4.

LEED patterns of (a,b) and (c,d) as observed immediately after hydrogen etching (a,c) and upon Si deposition and annealing (b,d). Corresponding AES spectra (and after outgassing) for (e) and (f) with the Si, C, and O AES transitions indicated. The insets show AES-peak ratios.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: SiC pore surfaces: Surface studies of 4H–SiC(11¯02) and 4H–SiC(1¯102¯)