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(Color online) Atomic model of 4H–SiC in side-view perspective along the direction with bonds within the plane indicated by black line (a), and orientation of the plane as grey line (a) and by lattice vector construction (b). Large atoms represent Si, small atoms C.
(Color online) Bulk truncated surface, (a) Si terminated with surface unit cell indicated, and (b) C terminated with 4H-bulk unit cell indicated. (c) surface shown in top view. The unit cell ( size), as well as the separation in cubic (100) type (bounded by dotted lines) and (0001) basal plane type (bounded by dashed lines) patches and crystal directions, are indicated.
(Color online) AFM images obtained after hydrogen etching of (a) and (b) . Line profiles parallel and perpendicular to the direction are shown on the right.
LEED patterns of (a,b) and (c,d) as observed immediately after hydrogen etching (a,c) and upon Si deposition and annealing (b,d). Corresponding AES spectra (and after outgassing) for (e) and (f) with the Si, C, and O AES transitions indicated. The insets show AES-peak ratios.
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