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Structural and electrical evolution of gate dielectric breakdown observed by conductive atomic force microscopy
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10.1063/1.2166679
/content/aip/journal/apl/88/3/10.1063/1.2166679
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/3/10.1063/1.2166679
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematics of CAFM (inset). (a) The results of the first, second, and fifth ramps of five sequential ramps: (b) Subsequent current image at sensing . Subsequent (c) current image and (d) topographical image at sensing .

Image of FIG. 2.
FIG. 2.

(a) Current image with sensing on area, the broken square shows the stressed area after negative stress ; (b) Subsequent current image on the same area with a negative sensing . (c) Topographical image at .

Image of FIG. 3.
FIG. 3.

BD during a single ramp (inset). (a) Consequent post-BD ramp after BD. Simultaneous (b) current and (c) topographical images at sensing . (d) Topographical profile of the hillock along AA’ in (c).

Image of FIG. 4.
FIG. 4.

The mechanism diagram of BD evolution. Si deformation occurs prior to the BD event and hastens it. The topographical hillock grows in height during BD evolution.

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/content/aip/journal/apl/88/3/10.1063/1.2166679
2006-01-20
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Structural and electrical evolution of gate dielectric breakdown observed by conductive atomic force microscopy
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/3/10.1063/1.2166679
10.1063/1.2166679
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