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Composition and resistivity changes of reactively sputtered W–Si–N thin films under vacuum annealing
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10.1063/1.2166691
/content/aip/journal/apl/88/3/10.1063/1.2166691
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/3/10.1063/1.2166691
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Ternary diagram of the samples A (엯), B (▾) and D (▿) before and after annealing in the temperature range for . The arrows are set to follow the increase of annealing temperature: start of the arrow ⇒ as grown layer; tip of the arrow ⇒ annealing at . Dashed line represents the tie line in the temperature interval (see Ref. 16).

Image of FIG. 2.
FIG. 2.

(a) ratio vs annealing temperature ( annealing time) in the A–D series of samples, as obtained from ion beam analysis. The dashed line indicates the stoichiometry. (b) Electrical resistivity of the A–D series as a function of the annealing temperature ( annealing time). The drawn lines are only a guide for the eyes.

Image of FIG. 3.
FIG. 3.

(a) FTIR absorption spectra of the layers A, B, C, and D before annealing. (b) FTIR spectra relative to sample C after annealing at different temperatures: 600, 750, 900 and . The same base line has been acquired for all the spectra. The different range of ordinates in (a) and (b) causes apparent different shape of the spectrum pertaining to sample C before annealing displayed in (a) and (b).

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/content/aip/journal/apl/88/3/10.1063/1.2166691
2006-01-20
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Composition and resistivity changes of reactively sputtered W–Si–N thin films under vacuum annealing
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/3/10.1063/1.2166691
10.1063/1.2166691
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