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Low-dislocation-density strain relaxation of SiGe on a buffer layer
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10.1063/1.2165283
/content/aip/journal/apl/88/4/10.1063/1.2165283
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/4/10.1063/1.2165283
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) High-resolution XRD spectra of the sample, showing a right shift of SiGe peak after annealing at various temperatures. The inset shows the schematic of the sample, with a buffer layer that consists of alternating layers.

Image of FIG. 2.
FIG. 2.

(Color online) TDD and degree of relaxation of the sample after annealing at various temperatures.

Image of FIG. 3.
FIG. 3.

(a) Low-magnification TEM image of the as-grown sample. The inset shows a bright-field TEM image of the alternating buffer layer. (b) Low-magnification TEM image of the sample after anneal at with threading dislocations indicated by arrows. The inset shows the presence of alternating buffer layer.

Image of FIG. 4.
FIG. 4.

(a) Low-magnification TEM image of the sample after anneal at . (b) HRTEM image of the sample’s interface after anneal at with misfit dislocations indicated by arrows. The inset shows the selected area electron diffraction pattern of the interface region, showing satellite spots of the domains.

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/content/aip/journal/apl/88/4/10.1063/1.2165283
2006-01-25
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Low-dislocation-density strain relaxation of SiGe on a SiGe∕SiGeC buffer layer
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/4/10.1063/1.2165283
10.1063/1.2165283
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