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Schematic of GaN thin film growth using ENABLE showing the energetic atom-beam source coupled to the group III-nitride thin-film growth system.
(Color online) XRD scans of GaN films grow at ambient temperature, 100 °C, 200 °C, and 300 °C. The GaN films grown at ambient temperatures are amorphous, while those grown at 100 °C and 200 °C are polycrystalline. A large increase in GaN film crystalline alignment is observed when the growth temperature is above 300 °C.
EL output of a GaN junction in forward bias. The emission wavelength of 415 nm (2.98 eV) closely matches the turn-on voltage measured by (inset) of 2.96 .
(a) A XRD scan of an ENABLE GaN film grown at on bare sapphire at 500 °C resulting in an exclusively -axis-oriented films. The FWHM of the GaN Bragg peak measures 0.28°. The XRD pole figure scan (inset) shows excellent in-plane alignment with a mosaic spread measuring between 2.8° and 3.0°. (b) TEM image of the sapphire/GaN interface for the same GaN film showing an abrupt interface without observable amorphous regions even though no buffer layer was used.
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