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Low-temperature growth of crystalline GaN films using energetic neutral atomic-beam lithography/epitaxy
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10.1063/1.2166485
/content/aip/journal/apl/88/4/10.1063/1.2166485
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/4/10.1063/1.2166485
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Figures

Image of FIG. 1.
FIG. 1.

Schematic of GaN thin film growth using ENABLE showing the energetic atom-beam source coupled to the group III-nitride thin-film growth system.

Image of FIG. 2.
FIG. 2.

(Color online) XRD scans of GaN films grow at ambient temperature, 100 °C, 200 °C, and 300 °C. The GaN films grown at ambient temperatures are amorphous, while those grown at 100 °C and 200 °C are polycrystalline. A large increase in GaN film crystalline alignment is observed when the growth temperature is above 300 °C.

Image of FIG. 3.
FIG. 3.

EL output of a GaN junction in forward bias. The emission wavelength of 415 nm (2.98 eV) closely matches the turn-on voltage measured by (inset) of 2.96 .

Image of FIG. 4.
FIG. 4.

(a) A XRD scan of an ENABLE GaN film grown at on bare sapphire at 500 °C resulting in an exclusively -axis-oriented films. The FWHM of the GaN Bragg peak measures 0.28°. The XRD pole figure scan (inset) shows excellent in-plane alignment with a mosaic spread measuring between 2.8° and 3.0°. (b) TEM image of the sapphire/GaN interface for the same GaN film showing an abrupt interface without observable amorphous regions even though no buffer layer was used.

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/content/aip/journal/apl/88/4/10.1063/1.2166485
2006-01-25
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Low-temperature growth of crystalline GaN films using energetic neutral atomic-beam lithography/epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/4/10.1063/1.2166485
10.1063/1.2166485
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