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Specific contact resistivity of nanowire devices
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10.1063/1.2163454
/content/aip/journal/apl/88/5/10.1063/1.2163454
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/5/10.1063/1.2163454

Figures

Image of FIG. 1.
FIG. 1.

(a) FE-SEM image at of a typical four-point contact to a NW. (b) FE-SEM image at of the middle contacts of the same device. It can be seen that the metal conformally covers the top of the NW. (c) Cross-section schematic shown by the dotted black line in (b) depicting the metal-NW interface as half the NW surface area.

Image of FIG. 2.
FIG. 2.

Two-point and four-point curves for an e-beam processed NW (Sample 1) and an opticall processed NW (Sample 2). The two-point curve was taken by varying the voltage and measuring current. The four-point curve was taken by varying the current while measuring voltage, and inverting.

Image of FIG. 3.
FIG. 3.

Scatter plot of contact vs NW resistivity including the bulk datapoint from Ref. 12. The devices highlighted by arrows, Samples 1 and 2, are the devices from Fig. 2. A linear best-fit to the NW data is shown as a dotted line.

Image of FIG. 4.
FIG. 4.

Plot of vs for 32 optically defined devices with backgates. The broken black line is a linear best-fit through the data with a slope of , an intercept of , and . The solid gray line shows the theoretic fit, with a slope of and an intercept of .

Tables

Generic image for table
Table I.

Table showing the growth conditions varied for GaN NW samples used in this study. For all samples, the catalyst was Ni, the Pressure was , the flux was 100 sccm, and the gallium source was a mixture of elemental gallium and gallium oxide.

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/content/aip/journal/apl/88/5/10.1063/1.2163454
2006-01-30
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Specific contact resistivity of nanowire devices
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/5/10.1063/1.2163454
10.1063/1.2163454
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