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Trapping artifacts in quasi-steady-state photoluminescence and photoconductance lifetime measurements on silicon wafers
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10.1063/1.2165274
/content/aip/journal/apl/88/5/10.1063/1.2165274
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/5/10.1063/1.2165274
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Image of FIG. 1.
FIG. 1.

(Color online) Effective minority carrier lifetime of a -type mc-Si wafer as a function of determined from QSS-PL, QSS-PC, and from QSS-PC with additional subband-gap illumination at two different intensities.

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/content/aip/journal/apl/88/5/10.1063/1.2165274
2006-02-03
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Trapping artifacts in quasi-steady-state photoluminescence and photoconductance lifetime measurements on silicon wafers
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/5/10.1063/1.2165274
10.1063/1.2165274
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