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High-resolution actinic defect inspection for extreme ultraviolet lithography multilayer mask blanks by photoemission electron microscopy
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10.1063/1.2168263
/content/aip/journal/apl/88/5/10.1063/1.2168263
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/5/10.1063/1.2168263
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Schematic of the EUV- and photoelectron-optical setup of the PEEM utilizing near normal incidence illumination

Image of FIG. 2.
FIG. 2.

(Color online) PEEM image and quantitative analysis of the spatial resolution of a Palladium microstructure test sample, aquired with mercury lamp illumination using the PEEM setup with microreflector as shown in Fig. 1.

Image of FIG. 3.
FIG. 3.

(Color online) Calculation using the IMD software by Windt (see Ref. 14) of the amplitude and phase of the undisturbed standing wave field in a 20 period multilayer stack for various wavelengths around the peak reflectivity wavelength. The incident wave field’s amplitude is normalized to 1, the calculations include absorption in the multilayer stack. Whether the multilayer surface is being penetrated by a wave front node or antinode depends on the wavelength of the incident radiation.

Image of FIG. 4.
FIG. 4.

(Color online) Transmission electron micrograph of a thin section through a defect buried by a metal-silicon-multilayer stack, produced by means of metalorganic chemical vapor deposition. The schematic illustrates the appearance of standing wave front nodes and antinodes due to the superposition of incoming and outgoing wave. Due to the defect, the wave front’s phase at the multilayer surface is disturbed in comparison to regions without defects, resulting in a difference in photoelectron emission.

Image of FIG. 5.
FIG. 5.

SEM image of the array of programmed defects before coating with the multilayer stack.

Image of FIG. 6.
FIG. 6.

PEEM image of an array of programmed defects buried under a 50 period multilayer stack, imaged at a wavelength of 13.1 nm. The field of view is . Structures with lateral sizes of 50 nm can be seen in the bottom row.

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/content/aip/journal/apl/88/5/10.1063/1.2168263
2006-02-01
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High-resolution actinic defect inspection for extreme ultraviolet lithography multilayer mask blanks by photoemission electron microscopy
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/5/10.1063/1.2168263
10.1063/1.2168263
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