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Manipulation of -factor in diluted magnetic semiconductors quantum dots: Optical switching control
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) Conduction-band Zeeman ground state levels of a Sp-QD, as a function of field, for various contents of Mn and . The inset is a diagram of a switching mechanism for given critical field, . (b) Calculated Landè -factor, as a function of field, for various Mn contents.

Image of FIG. 2.
FIG. 2.

(a) Interband absorption spectra for polarization at and of a Sp QD of and . (b) and (c) The same as in (a) for and -polarizations, respectively. The diameter of the circle represents the peak amplitude and vertical dotted lines show the critical field value. (d) Calculated frequency difference, , between excitonic resonances for , , and polarizations.

Image of FIG. 3.
FIG. 3.

Calculated values of with different confinement sizes for Sp and S-Sp geometries and . The insets show (a) the auxiliary diagram for the upper operational temperature, , and (b) the temperature dependence of .

Image of FIG. 4.
FIG. 4.

Calculated Raman shifts, as a function of field, for the complementary scattering configurations.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Manipulation of g-factor in diluted magnetic semiconductors quantum dots: Optical switching control