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GaN quantum dots doped with Tb
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10.1063/1.2168504
/content/aip/journal/apl/88/5/10.1063/1.2168504
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/5/10.1063/1.2168504
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Density, (b) diameter, and (c) height of Tb-doped GaN QDs as a function of their Tb content. Solid and open squares correspond to the lower and higher growth temperatures, respectively.

Image of FIG. 2.
FIG. 2.

Total amount of GaN material in one QDs plane as a function of Tb content. Solid and open circles correspond to the lower and higher growth temperatures, respectively.

Image of FIG. 3.
FIG. 3.

PL spectra of Tb-doped GaN QDs measured at room temperature with different Tb contents. The dashed line is a guide to the eye. The Tb content is indicated on each spectrum.

Image of FIG. 4.
FIG. 4.

Energy diagram for intra- transitions of ion found at room temperature in Tb-doped GaN QDs. The gray band indicates a range of the energy gap of GaN QDs.

Image of FIG. 5.
FIG. 5.

Integrated PL intensity of GaN QDs and ions as a function of Tb content. Solid and open circles correspond to GaN QDs and ions, respectively.

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/content/aip/journal/apl/88/5/10.1063/1.2168504
2006-01-30
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: GaN quantum dots doped with Tb
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/5/10.1063/1.2168504
10.1063/1.2168504
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