1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Strain-induced changes in the gate tunneling currents in -channel metal–oxide–semiconductor field-effect transistors
Rent:
Rent this article for
USD
10.1063/1.2168671
/content/aip/journal/apl/88/5/10.1063/1.2168671
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/5/10.1063/1.2168671
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Wafer bending for biaxial and uniaxial stress; (b) schematic band diagram for direct hole tunneling in a -MOSFET.

Image of FIG. 2.
FIG. 2.

The relative change of the tunneling currents versus applied uniaxial compression, biaxial compression, and biaxial tension, respectively. Dots are experimental data and lines are physical model.

Image of FIG. 3.
FIG. 3.

Charge density versus applied stress for the top, bottom, and split-off bands for three applied stresses. (a) Uniaxial compression, (b) biaxial compression, and (c) biaxial tension. The inset shows the simplified hole valence band structure for the out-of-plane direction with the corresponding effective mass.

Loading

Article metrics loading...

/content/aip/journal/apl/88/5/10.1063/1.2168671
2006-01-31
2014-04-18
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Strain-induced changes in the gate tunneling currents in p-channel metal–oxide–semiconductor field-effect transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/5/10.1063/1.2168671
10.1063/1.2168671
SEARCH_EXPAND_ITEM