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Nanometer-scale strain measurements in semiconductors: An innovative approach using the plasmon peak in electron energy loss spectra
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10.1063/1.2169904
/content/aip/journal/apl/88/5/10.1063/1.2169904
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/5/10.1063/1.2169904
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The change in energy as a function of In content calculated from Eq. (3).

Image of FIG. 2.
FIG. 2.

Dark-field STEM image of the heterostructure indicating the area corresponding to the spectrum image. The map of is shown below.

Image of FIG. 3.
FIG. 3.

Comparison between theoretical and experimental energies .

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/content/aip/journal/apl/88/5/10.1063/1.2169904
2006-02-02
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nanometer-scale strain measurements in semiconductors: An innovative approach using the plasmon peak in electron energy loss spectra
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/5/10.1063/1.2169904
10.1063/1.2169904
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