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Lifetime-limiting defects in 4H-SiC epilayers
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10.1063/1.2170144
/content/aip/journal/apl/88/5/10.1063/1.2170144
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/5/10.1063/1.2170144
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Low-injection PL decays for epilayers with varying layer thicknesses, as noted in the figure.

Image of FIG. 2.
FIG. 2.

Typical DLTS spectra of: (a) dominant electron traps and (b) dominant hole traps observed in 4H-SiC epilayers. A (and -center) spectrum measured in a diode is shown in the inset.

Image of FIG. 3.
FIG. 3.

(a) Dependence of measured defect concentrations and on layer thickness. (b) Fit of the dependence of on layer thickness (open squares and dashed line) using Eq. (2), compared to the measured values (solid circles). Inset: Dependence of the extracted inverse bulk MCL on concentration.

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/content/aip/journal/apl/88/5/10.1063/1.2170144
2006-02-01
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Lifetime-limiting defects in n− 4H-SiC epilayers
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/5/10.1063/1.2170144
10.1063/1.2170144
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