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-type ZnO films with solid-source phosphorus doping by molecular-beam epitaxy
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10.1063/1.2170406
/content/aip/journal/apl/88/5/10.1063/1.2170406
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/5/10.1063/1.2170406

Figures

Image of FIG. 1.
FIG. 1.

(Color online) XRD spectra and RHEED patterns (inset) for (a) undoped ZnO (sample A), (b) phosphorus-doped ZnO with a GaP cell temperature of 710 °C (sample B), and (c) phosphorus-doped ZnO with a GaP cell temperature of 750 °C (sample C).

Image of FIG. 2.
FIG. 2.

The Hall resistance as a function of applied magnetic field at RT for a phosphorus-doped ZnO film (sample B). The inset is a curve for this sample.

Image of FIG. 3.
FIG. 3.

Temperature dependence of the hole concentration for a phosphorus-doped ZnO film (sample B). The inset shows Hall mobility as a function of temperature (sample B).

Image of FIG. 4.
FIG. 4.

PL spectra measured at for (a) undoped ZnO (sample A), (b) phosphorus-doped ZnO with a GaP cell temperature of 710 °C (sample B), and (c) phosphorus-doped ZnO with a GaP cell temperature of 750 °C (sample C); (d) shows the PL spectra measured for several temperatures over the range from 8 to 300 K (sample B). The inset is the integrated intensity of the emission as a function of temperature. The dots represent the experimental data, and the solid line is the fit.

Tables

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Table I.

Electrical properties of undoped and phosphorus-doped ZnO films at RT.

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/content/aip/journal/apl/88/5/10.1063/1.2170406
2006-01-31
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: p-type ZnO films with solid-source phosphorus doping by molecular-beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/5/10.1063/1.2170406
10.1063/1.2170406
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