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Lattice parameter and hole density of (Ga,Mn)As on GaAs(311)A
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10.1063/1.2170408
/content/aip/journal/apl/88/5/10.1063/1.2170408
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/5/10.1063/1.2170408
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Comparison of the measured scans for the symmetric (113) and (004) Bragg reflections for as-grown LT GaAs (dotted lines) and (solid lines) layers on (311)A and (100) GaAs substrates, respectively.

Image of FIG. 2.
FIG. 2.

Relaxed lattice constant and lattice distortion , respectively, as a function of Mn content for (100) (open circles) and (311)A (open triangles) (Ga,Mn)As layers. The solid symbols represent calculated values using Eq. (1) .

Image of FIG. 3.
FIG. 3.

(a) Hole densities of (100) (circles) and (311)A (triangles) (Ga,Mn)As layers before (open symbols) and after (solid symbols) annealing as a function of the Mn content and (b) concentrations , and of the as-grown samples, estimated from the measured hole densities and lattice parameters.

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/content/aip/journal/apl/88/5/10.1063/1.2170408
2006-01-30
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Lattice parameter and hole density of (Ga,Mn)As on GaAs(311)A
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/5/10.1063/1.2170408
10.1063/1.2170408
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