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Comparison of the measured scans for the symmetric (113) and (004) Bragg reflections for as-grown LT GaAs (dotted lines) and (solid lines) layers on (311)A and (100) GaAs substrates, respectively.
Relaxed lattice constant and lattice distortion , respectively, as a function of Mn content for (100) (open circles) and (311)A (open triangles) (Ga,Mn)As layers. The solid symbols represent calculated values using Eq. (1) .
(a) Hole densities of (100) (circles) and (311)A (triangles) (Ga,Mn)As layers before (open symbols) and after (solid symbols) annealing as a function of the Mn content and (b) concentrations , and of the as-grown samples, estimated from the measured hole densities and lattice parameters.
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