Full text loading...
Main panels: The position dependent voltage measurements, , of (a) an In-GaAs MSHs and (b) a bare GaAs sample acquired under identical conditions at and with 20 mW of 476.5 nm laser radiation focused onto the sample surface in a Gaussian spot of radius , zero bias current. The symbols correspond to , ◻; 0.5 mm, 엯; and 1.0 mm, ◇. Insets: (a) A schematic view of the rectangular MSHs (metal shown dark, semiconductor light) and (b) the bare sample.
Main panel: The dependence of the potential difference [calculated from Eq. (2)] for the MSHs shown in the inset of Fig. 1(a). The symbols correspond to , 엯, and , ◻. The values used in the calculation were 0.2 mm (dashed curve) and 0.7 mm (solid curve). Measurements were taken at 300 K with all other parameters the same as Fig. 1. Insets: (Lower left) The relevant distances [entering the calculation of Eq. (2)]. The variables , , and , facilitated the computation of Eq. (2). (Upper right) Schematic representation of the Gaussian steady-state electron (thin solid line), hole (thick solid line), and net (dashed line) charge distributions.
The temperature dependence of the EOC [defined by Eq. (5)]. The measurements were acquired with the illuminating laser beam at a fixed position of and with values of 0.2 mm, 엯; 0.4 mm, ; 0.6 mm, ◻; 0.8 mm, ⧄; 1.0 mm, ◇; and 1.2 mm, . Other relevant parameters are the same as Fig. 1. Inset: wiring configurations for the shunted and bare sample. and .
Article metrics loading...