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Moments-based tight-binding calculations of local electronic structure in InAs/GaAs quantum dots for comparison to experimental measurements
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10.1063/1.2171473
/content/aip/journal/apl/88/5/10.1063/1.2171473
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/5/10.1063/1.2171473
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Figures

Image of FIG. 1.
FIG. 1.

(Color) (a) Top view and (b) side view of the cuboid GaAs nanostructures . (c) The local density of states (LDOS) of the center Ga atom and As atom in GaAs structure. (d) The LDOS of the center Ga atoms near the Fermi energy in cuboid GaAs nanostructures with different size. (e) The band gap of the center Ga atom in GaAs structure under hydrostatic deformation .

Image of FIG. 2.
FIG. 2.

(Color) (a) The center layer of the core part of relaxed structure of InAs quantum dot (QD) surrounded by GaAs buffer. (b) The LDOS of different atoms in the InAs QD and GaAs buffer. (c) The LDOS distribution for the energy level along the direction in the InAs QD and its nearby buffer. (d) The LDOS of the center In atoms of QD with different sizes. (e) The relationship between the energy gaps of InAs QD and the numbers of atoms in the QD.

Image of FIG. 3.
FIG. 3.

(Color) (a) Atomic resolution scanning tunneling microscopy (STM) image of an InAs QD. The bright region is the QD and the dark is the GaAs buffer. (b) The atomic structure of the QD recorded from the STM image. The LDOS of (I) the Ga atom in the buffer; (II) In atom in the QD; and (III) In atom near the interface from (c) the experimental scanning tunneling spectra and (d) computational studies. Note that the curves (II) and (III) are offset up in (c) and (d).

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/content/aip/journal/apl/88/5/10.1063/1.2171473
2006-01-31
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Moments-based tight-binding calculations of local electronic structure in InAs/GaAs quantum dots for comparison to experimental measurements
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/5/10.1063/1.2171473
10.1063/1.2171473
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