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(a) SEM image of s-SWNT device. Four electrodes were formed on the carbon nanotubes deposited on gate dielectric. Schematic device structure (b) and circuit diagram (c) of two-terminal measurement. was applied from one of the inner electrodes and the other inner electrode was grounded. Schematic device structure (d) and circuit diagram (e) of four-terminal measurement. was applied from the one of the outer electrodes. Another inner electrode was grounded. The inner two electrodes were used as a potential tap that measured the voltage actually applied to the CNT sample. was applied through the dielectric layer in both the two-terminal and the four-terminal measurements. The back-gate electrode is not shown in the circuit diagrams.
The gate voltage dependence of (solid lines), (dashed lines) and (dotted lines) on a log scale for (a) m-SWNT, (b) MWNT and (c) s-SWNT FETs.
Effects of gate and chemical dopings on and in s-SWNT FETs. (a) Gate doping. Expanded image of Fig. 2(c). (b) Chemical doping. The horizontal axis is converted to the hole density. In both figures, faster reduction of than is seen.
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