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Schematic band diagram of the InGaAsN–GaAsSb type II “W” QW structure. GaAsP layers are employed for strain compensation purposes. The InGaAsN and GaAsSb thicknesses are 2.5 and , respectively.
The high-resolution x-ray diffraction pattern, along the (0 0 4) direction, for a three-stage InGaAsN–GaAsSb “W” structure. The two envelopes are induced by the GaAsSb and InGaAsN layers. The distinct fringe pattern confirms the high quality of the grown materials and interfaces, in spite of the large lattice mismatch .
(a) A PL spectrum of the InGaAsN–GaAsSb type II QW “W” structures grown with various gas phase ratios ranging from 0.994 to 0.996. A substantial wavelength redshift was observed with increasing nitrogen content in the InGaAsN QW. (b) PL comparison between the type II structure and InGaAsN and GaAsSb type I QWs, showing clear evidence for longer-wavelength emission when the type II band alignment is employed.
Room temperature PL spectrum of the InGaAsN–GaAsSb type II “W” structure.
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