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Domain pinning in quantum well infrared photodetectors
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10.1063/1.2171767
/content/aip/journal/apl/88/5/10.1063/1.2171767
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/5/10.1063/1.2171767
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Potential distribution of a device structure exhibiting electric field domains, where the emitter contact is adjacent to (a) the high-field domain and (b) the low-field domain, respectively (full lines). The dashed lines indicate the potential distribution at a reduced bias voltage.

Image of FIG. 2.
FIG. 2.

(a) Responsivity at vs bias voltage at different power densities. (b) Ratio between the responsivities at 2 and (circles) and peak-to-valley ratio (triangles) of vs optical power density.

Image of FIG. 3.
FIG. 3.

(a) Measured total current of the device exhibiting electric field domains (solid line) and expected current in the case of homogeneous field (dashed) vs bias voltage. Inset: Measured dark current , photocurrent for homogeneous field , and , vs bias voltage. (b) (solid lines) and (dashed) vs bias voltage at different incident powers as indicated.

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/content/aip/journal/apl/88/5/10.1063/1.2171767
2006-02-02
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Domain pinning in GaAs∕AlGaAs quantum well infrared photodetectors
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/5/10.1063/1.2171767
10.1063/1.2171767
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