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(a) The SEM image of the topside of a device with a CNT bundle bridging the gap, which was formed before the photoresist process; and (b) the measurement setup. The source electrode is grounded, the drain electrode is tied to and the liquid-gate electrode is connected to . The passivation layer keeps the source and drain electrode from the solution.
The measured drain current versus drain voltage for both the distilled water and aqueous solution with the liquid-gate voltage as a parameter. The inset shows the liquid-gate current in the distilled water case with and without a passivation layer at .
(a) The measured conductance for CNTs exposed to the distilled water (▴) and aqueous solution (◻) in the high drain voltage region; (b) the capacitive equivalent circuit seen from the liquid-gate electrode to the underlying CNTs; and (c) the calculated vs Fermi level for CNTs exposed to the distilled water (▴) and aqueous solution (◻), as well as the carrier density vs Fermi level.
The ratio (∎) of measured drain current in aqueous solution to that in distilled water vs liquid-gate voltage. The solid line is the corresponding calculated ratio. Also displayed are the positions of the Fermi level relative to the common one-dimensional subband diagram, respectively, corresponding to three operating points.
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