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Semiconducting single-walled carbon nanotubes exposed to distilled water and aqueous solution: Electrical measurement and theoretical calculation
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10.1063/1.2172014
/content/aip/journal/apl/88/5/10.1063/1.2172014
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/5/10.1063/1.2172014
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) The SEM image of the topside of a device with a CNT bundle bridging the gap, which was formed before the photoresist process; and (b) the measurement setup. The source electrode is grounded, the drain electrode is tied to and the liquid-gate electrode is connected to . The passivation layer keeps the source and drain electrode from the solution.

Image of FIG. 2.
FIG. 2.

The measured drain current versus drain voltage for both the distilled water and aqueous solution with the liquid-gate voltage as a parameter. The inset shows the liquid-gate current in the distilled water case with and without a passivation layer at .

Image of FIG. 3.
FIG. 3.

(a) The measured conductance for CNTs exposed to the distilled water (▴) and aqueous solution (◻) in the high drain voltage region; (b) the capacitive equivalent circuit seen from the liquid-gate electrode to the underlying CNTs; and (c) the calculated vs Fermi level for CNTs exposed to the distilled water (▴) and aqueous solution (◻), as well as the carrier density vs Fermi level.

Image of FIG. 4.
FIG. 4.

The ratio (∎) of measured drain current in aqueous solution to that in distilled water vs liquid-gate voltage. The solid line is the corresponding calculated ratio. Also displayed are the positions of the Fermi level relative to the common one-dimensional subband diagram, respectively, corresponding to three operating points.

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/content/aip/journal/apl/88/5/10.1063/1.2172014
2006-02-01
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Semiconducting single-walled carbon nanotubes exposed to distilled water and aqueous solution: Electrical measurement and theoretical calculation
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/5/10.1063/1.2172014
10.1063/1.2172014
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