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Capacitance-voltage investigation of high-purity superlattice photodiodes
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10.1063/1.2172399
/content/aip/journal/apl/88/5/10.1063/1.2172399
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/5/10.1063/1.2172399
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Plot of the square of vs the reverse bias voltage measured at . For the slope close to , an oscillation level of was chosen. The large voltage sweep has been performed with a 100-mV oscillation level. The slope close to results in a carrier concentration of . Consistent with this value is the observation of saturation at because of full depletion of the nid layer. The 20-mV data have been vertically offset for clarity.

Image of FIG. 2.
FIG. 2.

The temperature dependence of the carrier concentration. The left panel shows the intrinsic and the saturation regimes above . At lower temperatures, carrier freeze-out with a thermal activation energy of is observed. The full line shows the expected carrier concentration assuming an impurity background of . The dashed line shows the intrinsic concentration taking into account the decrease of the band gap with increasing temperature.

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/content/aip/journal/apl/88/5/10.1063/1.2172399
2006-02-03
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Capacitance-voltage investigation of high-purity InAs∕GaSb superlattice photodiodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/5/10.1063/1.2172399
10.1063/1.2172399
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