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Hole-mobility limit of amorphous silicon solar cells
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Image of FIG. 1.
FIG. 1.

Temperature-dependent measurements of and the for four as-deposited -Si:H nip solar cells with varying intrinsic layer thickness are indicated by the symbols. Measurements were done at constant laser flux; the average photogeneration rate at 295 K was . The lines indicate corresponding calculations for a model based primarily on hole drift-mobility measurements.

Image of FIG. 2.
FIG. 2.

Temperature-dependent calculations for of an -Si:H nip solar cell based on a deep-level model are shown as the dashed line; the intrinsic layer thickness is 893 nm. The corresponding experimental measurements (symbols) and valence band tail based calculations from Fig. 1 are also shown for reference.

Image of FIG. 3.
FIG. 3.

Symbols indicate temperature-dependent measurements of and for an 893-nm-thick cell in its as-deposited and light-soaked (200 h at 295 K) states. The calculated line through the as-deposited measurements is from the hole drift-mobility based calculation of Fig. 1; for the light-soaked state, the calculation also includes a density of deep levels.


Generic image for table
Table I.

-Si:H solar cell modeling parameters (see Ref. 6, 8, and 11). Solar cell performance is mainly sensitive to the first 5 parameters, governing the hole drift mobility and the bandgap.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Hole-mobility limit of amorphous silicon solar cells