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(a) XPS depth profiles showing the in-depth Mn concentration for the (solid curve) and (dashed curve) Mn ion doses in Ge(001) implanted samples. Upper curves: corresponding Ge concentrations. The vertical dashed lines on the alloy curve indicate the depths of subsequent sputtering in correspondence of which the valence band spectra have been taken (see Fig. 2). (b): XRD patterns for the two ion implanted MnGe samples.
(a) Valence band spectra taken on the Mn ion dose sample at various depths (Mn surface concentration, see Fig. 1) after seven subsequent sputtering cycles (spectra are normalized to unit at their common peak energy value at ). (b) and (c) Corresponding incremental difference spectra (horizontal dashed lines are the corresponding zero levels). The solid curve superimposed on the (v)-(iv) data in (c) is the Mn projected DOS for substitutional Mn in Ge [see Fig. 3(a)].
PDOS of (a) substitutional and (b) interstitial Mn in Ge with and without (upper and lower lines, respectively). Upon inclusion of , the Mn PDOS for different concentrations (6.25% and 12.5%) is also reported. Inset: Orbital ( and ) and spin resolved Mn PDOS.
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