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Investigation of a polythiophene interface using photoemission spectroscopy in combination with electrospray thin-film deposition
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10.1063/1.2172069
/content/aip/journal/apl/88/6/10.1063/1.2172069
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/6/10.1063/1.2172069
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Figures

Image of FIG. 1.
FIG. 1.

He I UP-spectra. The center graph shows the complete spectra as measured. The bottom spectrum corresponds to the pristine, in-vacuum cleaved, HOPG surface. The subsequent spectra were measured after each of the P3HT deposition steps. On the right, the valence bands/HOMO spectral region is shown with removed background. On the left, the secondary edge feature is shown normalized allowing better comparison. The insert shows the evaluation of the HOMO cutoff of the deposition step for the determination of ionization energy and orbital alignment at the HOPG interface.

Image of FIG. 2.
FIG. 2.

Series of S doublet spectra measured with XPS. The bottom spectrum was measured on the freshly cleaved HOPG crystal. The upper spectra were measured after each of the P3HT deposition steps. The peaks show a slight shift to higher binding energy, which indicates the formation of band bending at the interface.

Image of FIG. 3.
FIG. 3.

Schematic depiction of the electronic structure of the HOPG/P3HT interface as determined from the spectra shown in Figs. 1 and 2.

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/content/aip/journal/apl/88/6/10.1063/1.2172069
2006-02-09
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Investigation of a polythiophene interface using photoemission spectroscopy in combination with electrospray thin-film deposition
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/6/10.1063/1.2172069
10.1063/1.2172069
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