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Improved quality -plane GaN with sidewall lateral epitaxial overgrowth
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10.1063/1.2172159
/content/aip/journal/apl/88/6/10.1063/1.2172159
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/6/10.1063/1.2172159

Figures

Image of FIG. 1.
FIG. 1.

(a) Processing sequence of the -GaN template for subsequent sidewall lateral overgrowth. (b) Schematic of the growth stages of sidewall lateral epitaxial overgrowth (SLEO).

Image of FIG. 2.
FIG. 2.

Atomic force microscopy (AFM) images of -GaN: (a) planar -GaN (6 nm rms); (b) (window/wing) stripes single-step LEO -GaN (5.82 nm rms); (c) (window/wing) stripes sidewall LEO -GaN (0.62 nm rms).

Image of FIG. 3.
FIG. 3.

(a) Cross-sectional SEM of the coalesced SLEO -plane GaN film with (window/wing) stripes. (b) Panchromatic CL image of the top surface of the coalesced SLEO -plane GaN film. (c) Schematic cross section of the coalesced SLEO -plane GaN film showing the coalescence fronts.

Tables

Generic image for table
Table I.

Surface roughness from AFM images, x-ray rocking curve widths and threading dislocation density for: planar -GaN, single step LEO -GaN ( window/wing stripes), and SLEO -GaN.

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/content/aip/journal/apl/88/6/10.1063/1.2172159
2006-02-07
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Improved quality (112¯0)a-plane GaN with sidewall lateral epitaxial overgrowth
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/6/10.1063/1.2172159
10.1063/1.2172159
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