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Semiconductor-laser-pumped high-power upconversion laser
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10.1063/1.2172293
/content/aip/journal/apl/88/6/10.1063/1.2172293
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/6/10.1063/1.2172293
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

-polarized ESA- (solid line) and GSA- (dotted line) spectrum of an crystal near under excitation. and are the cross sections of stimulated emission and excited state absorption, is the population density of level , and is the total excitation density summed over all excited levels (see Ref. 7). The OPS center pump wavelengths used in the different laser experiments are indicated with dashed lines.

Image of FIG. 2.
FIG. 2.

Energy level scheme of . The two-step upconversion pump mechansim for the laser transition at 552 nm is indicated.

Image of FIG. 3.
FIG. 3.

Experimental setup for fourfold pass pumping.

Image of FIG. 4.
FIG. 4.

OPS spectra at the center pumping wavelengths used in different experiments.

Image of FIG. 5.
FIG. 5.

Input-output characteristics for an OPS pumped crystal lasing at 552 nm under cw (dots) and 50% duty cycle pumping (squares).

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/content/aip/journal/apl/88/6/10.1063/1.2172293
2006-02-07
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Semiconductor-laser-pumped high-power upconversion laser
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/6/10.1063/1.2172293
10.1063/1.2172293
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