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(a) Al concentration-depth profiles and (b) XRD patterns (after subtraction of XRD background as recorded from the bare substrate) for as-deposited and annealed samples (A). The XRD measurements were performed under the same experimental conditions and using the same piece of sample A. The number within the brackets, after the time of annealing indication, represents a normalized value of the integrated intensity of the Si(111) peak.
XRD patterns (after subtraction of XRD background as recorded from the bare substrate) for sample (A) and sample (B) annealed at for . The inset shows the measured Al concentration-depth profiles for sample B as-deposited and annealed at for .
XRD pattern [without subtraction of XRD background (!): cf. Fig. 2] for sample C as-deposited and annealed at for . The inset shows the measured Al concentration-depth profiles.
Calculated Si crystallization energy ; Al grain-boundary energy ; energies of the interfaces between crystalline Al and amorphous Si , crystalline Al and crystalline Si and crystalline Si and amorphous Si at .
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