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Wetting and crystallization at grain boundaries: Origin of aluminum-induced crystallization of amorphous silicon
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10.1063/1.2172707
/content/aip/journal/apl/88/6/10.1063/1.2172707
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/6/10.1063/1.2172707

Figures

Image of FIG. 1.
FIG. 1.

(a) Al concentration-depth profiles and (b) XRD patterns (after subtraction of XRD background as recorded from the bare substrate) for as-deposited and annealed samples (A). The XRD measurements were performed under the same experimental conditions and using the same piece of sample A. The number within the brackets, after the time of annealing indication, represents a normalized value of the integrated intensity of the Si(111) peak.

Image of FIG. 2.
FIG. 2.

XRD patterns (after subtraction of XRD background as recorded from the bare substrate) for sample (A) and sample (B) annealed at for . The inset shows the measured Al concentration-depth profiles for sample B as-deposited and annealed at for .

Image of FIG. 3.
FIG. 3.

XRD pattern [without subtraction of XRD background (!): cf. Fig. 2] for sample C as-deposited and annealed at for . The inset shows the measured Al concentration-depth profiles.

Tables

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Table I.

Calculated Si crystallization energy ; Al grain-boundary energy ; energies of the interfaces between crystalline Al and amorphous Si , crystalline Al and crystalline Si and crystalline Si and amorphous Si at .

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/content/aip/journal/apl/88/6/10.1063/1.2172707
2006-02-09
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Wetting and crystallization at grain boundaries: Origin of aluminum-induced crystallization of amorphous silicon
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/6/10.1063/1.2172707
10.1063/1.2172707
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