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(a) Schematic diagram showing the TOF sample configuration with the charge-generation layer. (b) Relative energy levels of a general charge-generation layer and the material under test.
Chemical structures of materials used: E3, -NPD, ADN, TPBI.
Absorption spectra of vacuum-deposited E3, ADN, and TPBI films.
Representative TOF transients for E3 : (a) hole, ; (b) electron, . Insets of (a)–(b) are double logarithmic plots of (a)–(b), respectively. (c) Hole and electron mobilities vs for E3.
(a) Representative TOF transients for holes of -NPD at . (b) Hole mobilities vs for -NPD. (c) Representative TOF transients for holes of ADN at . (d) Hole mobilities vs for ADN. (e) Representative TOF transients for electrons of TPBI at . (f) Electron mobility vs for TPBI. Insets of (a), (c), and (e) are double logarithmic plots of (a), (c), and (e), respectively.
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