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Reflectivity of nc- with and without hydrogenation. H0 is without hydrogenation and H15 and H20 are with hydrogenation. 0, 15, and 20 are the flow rate of hydrogen in sccm unit. The characteristic dip and hump are shown by the arrows. These energies move to a higher energy with the hydrogenation.
Optical absorption coefficients up to . The absorption coefficient of H0 nc- is largest and that of H15 agrees with that of the single crystalline beyond about . The absorption of nc- below is the below band gap absorption by the dangling bond and the strain. The inset shows a linear plot of the absorption coefficient.
Characteristic difference among absorptions . The absorption difference is about one tenth of the original absorption coefficient. The solid line is the difference between the H0 nc- and the single crystalline . and are the indirect and direct band gaps of the single crystalline , respectively. It peaks around the band gaps of the single crystalline , respectively. The dangling bond and the strain of the H0 nc- is the probable cause of this enhanced absorption.
Characteristic energy vs hydrogen flow rate. and are characteristic energy in Fig. 1. The notation is the energy at the absorption coefficient of in Fig. 2. and are the indirect and direct band gaps of the single crystalline , respectively. The hydrogenation changes the characteristic energies dramatically. In this sense, the hydrogenation is alloying.
Imaginary part of dielectric constant of H20 nc- and theoretical result. The measurement up to and its Kramers-Kronig relation is only successful for the H20 nc-. The general feature of the imaginary part of the theoretical result of the single crystalline agrees with the experimental imaginary part of the single crystalline . The close agreement about the structure of the H20 nc- with that of the single crystalline implies that the nc- “memorizes” the electronic structure of the single crystalline . On the other hand the structure at about is smeared out. The dangling and the strain in the nc- deform only the electronic structure around .
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