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interface engineering for high-output-voltage device applications
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10.1063/1.2172717
/content/aip/journal/apl/88/6/10.1063/1.2172717
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/6/10.1063/1.2172717
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

RHEED pattern measured along the [100] direction after the growth of the thick Fe bottom layer for sample B. A profile highlights 3 peaks; right: RHEED pattern measured along the [100] direction after the growth of the Fe bottom layer and adjunction of C for sample A. A profile highlights 2 additional peaks characteristic of the reconstruction.

Image of FIG. 2.
FIG. 2.

Magnetoresistance as a function of applied voltage measured on a tunnel junction (엯) and on a tunnel junction (●). The right top inset shows a characteristic resistance versus applied field measured on a tunnel junction at (엯) and the left bottom inset shows a characteristic resistance versus applied field measured on a tunnel junction at (●).

Image of FIG. 3.
FIG. 3.

Output voltage versus applied voltage measured on a tunnel junction (엯) and on a tunnel junction (●).

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/content/aip/journal/apl/88/6/10.1063/1.2172717
2006-02-09
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Fe∕MgO interface engineering for high-output-voltage device applications
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/6/10.1063/1.2172717
10.1063/1.2172717
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