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Temperature-dependent Hall-effect measurements show the variation of hole concentration as a function of inverse temperature for the sample grown at .
The results of electrical properties for Li-doped, -type ZnO thin film re-examined several weeks later.
SIMS depth profiles of Li-doped ZnO thin film grown via a two-step process: high-temperature growth followed by low-temperature growth.
characteristics of homojunction measured at room temperature. The inset shows the schematic of the homojunction.
characteristics of alloy contacts on -type and -type thin films.
Electrical properties of Li-doped ZnO thin films deposited at different substrate temperatures.
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