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Variation of the RHEED specular beam intensity during the GaN growth for substrate temperatures from 648 °C to 680 °C under stoichiometric growth condition. The Ga cell temperature is kept constant at 1140 °C, and the pressure is .
Dependence of surface morphology of GaN for different III-V ratios during growth at 700 °C on KOH etched GaN templates. (a) Etched template; Surface morphologies of GaN growth for 2 h on (b) stoichiometric; and (c) Ga-rich conditions, respectively .
Summary of Ga desorption energies for different Ga III/V ratios on the GaN surface at different substrate temperatures indicated in the “ range” row.
Desorption energies with different Ga-Ga separation and coverage.
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