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Gallium desorption kinetics on (0001) GaN surface during the growth of GaN by molecular-beam epitaxy
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10.1063/1.2166478
/content/aip/journal/apl/88/7/10.1063/1.2166478
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/7/10.1063/1.2166478

Figures

Image of FIG. 1.
FIG. 1.

Variation of the RHEED specular beam intensity during the GaN growth for substrate temperatures from 648 °C to 680 °C under stoichiometric growth condition. The Ga cell temperature is kept constant at 1140 °C, and the pressure is .

Image of FIG. 2.
FIG. 2.

Dependence of surface morphology of GaN for different III-V ratios during growth at 700 °C on KOH etched GaN templates. (a) Etched template; Surface morphologies of GaN growth for 2 h on (b) stoichiometric; and (c) Ga-rich conditions, respectively .

Tables

Generic image for table
Table I.

Summary of Ga desorption energies for different Ga III/V ratios on the GaN surface at different substrate temperatures indicated in the “ range” row.

Generic image for table
Table II.

Desorption energies with different Ga-Ga separation and coverage.

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/content/aip/journal/apl/88/7/10.1063/1.2166478
2006-02-13
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Gallium desorption kinetics on (0001) GaN surface during the growth of GaN by molecular-beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/7/10.1063/1.2166478
10.1063/1.2166478
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