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Maximum power of quantum dot laser versus internal loss
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10.1063/1.2174103
/content/aip/journal/apl/88/7/10.1063/1.2174103
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/7/10.1063/1.2174103
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Confined-carrier level occupancy in a QD (right axis), free-carrier density in the OCL (right axis), and internal loss (left axis) against injection current density. heterostructure with a single layer of QDs emitting near is considered. The parameters are as follows: 10% QD-size fluctuations, , , and . The normalized cross section of internal absorption loss , where is the maximum tolerable value of the absorption cross section, at which the lasing becomes unattainable in a single-layer structure considered.

Image of FIG. 2.
FIG. 2.

Light-current characteristics of lasers with (a) single layer of QDs and (b) four layers of QDs for different cross sections of internal absorption loss. The normalized cross section values are as follows: (i) 0.1, (ii) 0.112, (iii) 0.13, (iv) 0.16, (v) 0.2, and (vi) 0.27. .

Image of FIG. 3.
FIG. 3.

Maximum output power of a single-layer structure against normalized cross section of internal absorption loss. .

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/content/aip/journal/apl/88/7/10.1063/1.2174103
2006-02-15
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Maximum power of quantum dot laser versus internal loss
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/7/10.1063/1.2174103
10.1063/1.2174103
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