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Composition dependence of the work function of metal gates
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10.1063/1.2174836
/content/aip/journal/apl/88/7/10.1063/1.2174836
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/7/10.1063/1.2174836
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Effect of gate dielectric and electrode composition on the work function of metal gate work function.

Image of FIG. 2.
FIG. 2.

Effect of nitrogen flow on the work function of metal gates over a range of Al compositions.

Image of FIG. 3.
FIG. 3.

curves showing well-behaved devices with metal gates. The curves shown are for three different % compositions in the gate dielectric.

Image of FIG. 4.
FIG. 4.

vs EOT plots showing excellent fits for three gate dielectric compositions. The slopes are comparable indicating similar interface fixed charges.

Image of FIG. 5.
FIG. 5.

XPS spectra showing chemical shifts corresponding to Al–O bond formation and simultaneous Si suboxide formation.

Image of FIG. 6.
FIG. 6.

XPS data showing chemical shift corresponding to Al–N, Si–N, and Ta–N bond formation with higher flow in the deposition process. The peak for lower flow is consistent with nitrogen deficient metal nitrides.

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/content/aip/journal/apl/88/7/10.1063/1.2174836
2006-02-16
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Composition dependence of the work function of Ta1−xAlxNy metal gates
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/7/10.1063/1.2174836
10.1063/1.2174836
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