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Effect of gate dielectric and electrode composition on the work function of metal gate work function.
Effect of nitrogen flow on the work function of metal gates over a range of Al compositions.
curves showing well-behaved devices with metal gates. The curves shown are for three different % compositions in the gate dielectric.
vs EOT plots showing excellent fits for three gate dielectric compositions. The slopes are comparable indicating similar interface fixed charges.
XPS spectra showing chemical shifts corresponding to Al–O bond formation and simultaneous Si suboxide formation.
XPS data showing chemical shift corresponding to Al–N, Si–N, and Ta–N bond formation with higher flow in the deposition process. The peak for lower flow is consistent with nitrogen deficient metal nitrides.
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