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Two-terminal measurements of nanowires. (a) TEM image showing typical M-S-M structure; (b)typical almost symmetric and (c) typical almost rectifying curve. The circles are experiment data, and solid lines are fitted theoretical curves in which a shunt resistance of is included to achieve a better agreement with the experiment curve at positive bias in (c).
Band diagram and characteristics of semiconducting nanowires. (a) Schematic band diagram showing band bending at the metal-semiconductor contacts and under applied voltage . (b) Variations of , and with applied voltage. Schottky barrier heights of both contacts are and the resistance of the nanowire is .
Experimental and fitted vs plot for at low bias using the curve shown in Fig. 1(b).
Relevant parameters for semiconducting , and nanowires.
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