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Photoconductivity and highly selective ultraviolet sensing features of amorphous silicon carbon nitride thin films
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10.1063/1.2178406
/content/aip/journal/apl/88/7/10.1063/1.2178406
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/7/10.1063/1.2178406
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

XPS spectra of (a) , (b) , and (c) for the thin film with the composition of Si(35%):C(24%):N(39%):O(2%).

Image of FIG. 2.
FIG. 2.

(a) Characteristics of photocurrent-voltage response of the MSM photodetector device under the irradiation of light sources with various wavelengths. (b) The spectral response of photosensitivity under an applied voltage of . The incident light intensities from the monochromatic Xe light source are 0.06 , 0.37 , 0.30 , 0.61 , 0.84 , 0.71 , and 1.04 , respectively.

Image of FIG. 3.
FIG. 3.

(a) Spectral response of the RQE. The quantum efficiency for the sample under the illuminated light with a wavelength is taken as 1. The corresponding optical transmittance of thin film is also shown. (b) Schematic models of the (1) defect band, the (2) localized bands, and the (3) extended bands, respectively, in the thin films. Regions (1), (2), and (3) have the same descriptions as in (a) and (b).

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/content/aip/journal/apl/88/7/10.1063/1.2178406
2006-02-17
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Photoconductivity and highly selective ultraviolet sensing features of amorphous silicon carbon nitride thin films
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/7/10.1063/1.2178406
10.1063/1.2178406
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