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Scanning electron microscopy photograph of a multiwalled CNT in electrical contact with two manganite lines that act as electrodes for the LSMO-CNT-LSMO devices. Inset: The 3.7 A terraces that are visible in this AFM picture of the LSMO film prior patterning are evidence of good epitaxy, given that the underlying substrate possesses similar terraces due to the vicinal offcut.
A typical characteristic for Pd-CNT-Pd devices. Inset: A typical trace showing the development of a zero-bias anomaly at low temperatures.
Typical characteristics at different temperatures for the LSMO-CNT-LSMO devices. As the temperature is lowered, a region of blocked conductance appears at low voltages. This can be clearly seen in the curves (inset).
Estimated values of the blocking energy extracted from for the LSMO-CNT-LSMO devices. The line is a guide for the eyes. Inset: A typical conductance as a function of the applied voltage for the LSMO-CNT-LSMO devices at 5 K. The line represents a power-law fit with .
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