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Scanning electron micrograph of the sample; the amount of deposited material was adjusted to obtain both small grain size and contiguity.
(Color online) Schematic of the structure allowing simultaneous optical and electrical characterization. The wire is deposited on amorphous and is terminated by Al contacts.
(Color online) Transmittance (a) and resistance (b) curves measured simultaneously as a function of temperature. The dashed lines show the extrapolation of the film properties in the semiconducting phase. The dotted lines mark the beginning of the transition for the heating branch and the end of the transition for the cooling branch (these temperatures correspond to a 5% deviation from the transmittance at room temperature). Crosses indicate the percolation thresholds (90% of the is metallic). The full line in (b) is the reconstructed hysteresis deduced from Eq. (3) using , was extracted from the transmittance.
(Color online) Dependence of the conductance on the fraction of that is metallic; this fraction is calculated from the transmittance curve [Fig. 3(a)] and is then substituted for temperature in the resistance data [Fig. 3(b)]. The continuous curves are obtained using the effective medium approximation.
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