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High-temperature operation of self-assembled quantum-dot lasers grown by solid-source molecular-beam epitaxy
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10.1063/1.2178231
/content/aip/journal/apl/88/8/10.1063/1.2178231
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/8/10.1063/1.2178231
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic cross section, layer structure, and band diagram of the QD laser (not to scale).

Image of FIG. 2.
FIG. 2.

characteristics of GaInNAs QD lasers with cavity length of 500 and , respectively, at .

Image of FIG. 3.
FIG. 3.

(a) Temperature-dependent characteristics of GaInNAs QD lasers with dimension of . (b) Plot of versus (left axis) and versus (right axis) for GaInNAs QD laser. was estimated to be in the temperature range of . was estimated to be and , respectively.

Image of FIG. 4.
FIG. 4.

Temperature-dependent characteristics of GaInNAs QD lasers with dimension of . The inset shows as function of temperature. was estimated to be in the temperature range of .

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/content/aip/journal/apl/88/8/10.1063/1.2178231
2006-02-21
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High-temperature operation of self-assembled GaInNAs∕GaAsN quantum-dot lasers grown by solid-source molecular-beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/8/10.1063/1.2178231
10.1063/1.2178231
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