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Mid-infrared hole-intersubband electroluminescence in carbon-doped quantum cascade structures
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View: Figures


Image of FIG. 1.
FIG. 1.

(Color online) Valence band diagram of one period of the active region-injector section of the hole electroluminescence structures with the square moduli of the most significant hole wave functions. The electric field is . The layer thicknesses in Å from right to left are: , where the bold font indicates the AlAs barriers, and the italic font shows the QWs (all the other layers are GaAs QWs). The underlined layers are C-doped at the total level of .

Image of FIG. 2.
FIG. 2.

(Color online) Hole intersubband photocurrent spectrum induced by -polarized light of an unbiased hole electroluminescence sample that has the valence band diagram and square moduli of the most significant wave functions at zero bias shown in the inset. The three transitions visible in the photocurrent spectrum are identified with the three transitions in the inset.

Image of FIG. 3.
FIG. 3.

(Color online) Spectra of a hole electroluminescence sample with the active region shown in Fig. 1 at three injection current densities. The data are fitted with a sum of Lorentzian line shapes as indicated. The inset shows the intersubband absorption in the same sample indicating the heavy-to-heavy hole transition in the active QW.

Image of FIG. 4.
FIG. 4.

(Color online) Light power output and voltage as a function on injection current density for the sample with the active region shown in Fig. 1.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Mid-infrared hole-intersubband electroluminescence in carbon-doped GaAs∕AlGaAs quantum cascade structures